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A Simulation Study of Various ETL Layers to Design the High Performance Pb-Free perovskite (FASnI3) Solar Cell

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Title A Simulation Study of Various ETL Layers to Design the High Performance Pb-Free perovskite (FASnI3) Solar Cell
 
Creator Dixit, Khushboo
Ahmad, Gufran
 
Subject Perovskite
Tungsten Oxide
Cadmium
Electron affinity
Band gap
Power conversion efficiency
 
Description 971-978
There are significant efforts being made to develop high-efficiency, lead-free perovskite solar cells (PSCs). In this study,
Formamidinium tin iodide (FASnI3) has been used as an absorber layer to design a stable lead-free PSC. FASnI3 absorber has a
wider band gap (1.41 eV) and is more temperature stable than lead-free Sn-based perovskite (CH3NH3SnI3). In this work, 1-D
device simulation has been performed using SCAPS to get the optimum performance of the lead-free FASnI3-based PSCs. We
have checked varieties of electron transport layers (ETL) such as WO3, TiO2, ZnO, PCBM, IGZO, ZnS, and WS2 to find the
maximum power conversion efficiency (PCE) from the FASnI3 lead-free PSC. A detailed simulation study of the proposed
solar cell architecture using SCAPS has been done to optimize the device structure and get the maximum power conversion
efficiency. The proposed solar cell structure has shown an efficiency of 16% with a JSC of 27.02 mA, Voc of 0.925V, and FF of
63.98% which is the highest among the FASnI3 based lead-free solar cell structures to date.
 
Date 2024-11-01T10:56:36Z
2024-11-01T10:56:36Z
2024-11
 
Type Article
 
Identifier 0975-0959 (Online); 0301-1208 (Print)
http://nopr.niscpr.res.in/handle/123456789/64809
https://doi.org/10.56042/ijpap.v62i11.8697
 
Language en
 
Publisher NIScPR-CSIR,India
 
Source IJPAP Vol.62(11) [November 2024]